2002. 10. 23 1/2 semiconductor technical data KTC2025D/l epitaxial planar npn transistor revision no : 2 low frequency power amp, medium speed switching applications features high breakdown voltage v ceo 120v, high current 1a. low saturation voltage and good linearity of h fe . complementary to kta1045d/l maximum rating (ta=25 ) dpak dim millimeters a b c d f h i j k l 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 2.70 0.2 2.30 0.1 1.00 max 2.30 0.2 0.5 0.1 2.00 0.20 0.50 0.10 e 0.91 0.10 m 0.90 0.1 o a c d b e k i j q h f f m o p l 123 1. base 2. collector 3. emitter 1.00 0.10 p 0.95 max q + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) (note) : h fe (1) classification y:100 200, gr:160 320 characteristic symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 5 v collector current i c 1 a i cp 2 collector power dissipation ta=25 p c 1.3 w tc=25 8 junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut of current i cbo v cb =50v, i e =0 - - 1 a emitter cut of current i ebo v eb =4v, i c =0 - - 1 a collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 120 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 120 - - v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 5 - - v dc current gain h fe (1) note v ce =5v, i c =50ma 100 - 320 h fe (2) v ce =5v, i c =500ma 20 - - gain bandwidth product f t v ce =10v, i c =50ma - 130 - mhz output capacitance c ob v cb =10v, i e =0, f=1mhz - 20 - pf collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma - 0.15 0.4 v base-emitter saturation voltage v be(sat) i c =500ma, i b =50ma - 0.85 1.2 v switching time turn-on time t on - 100 - ns turn-off time t off - 500 - storage time t stg - 700 - i b2 b1 i 20u sec 1uf 1uf 24 ? 1 ? 1 100 ? ce v =12v -2v 12v i =10i =-10i =500ma c b1 b2 dim millimeters ipak d b q e h f f c a p l i j 123 a b c d e f g h i j l p q 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 9.50 0.6 2.30 0.1 0.76 0.1 1.0 max 2.30 0.2 0.5 0.1 0.50 0.1 1.0 0.1 0.90 max g 1. base 2. collector 3. emitter k 2.0 0.2 k + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _
2002. 10. 23 2/2 KTC2025D/l revision no : 2 c collector current i (a) 0 0 base-emitter voltage v (v) be c be v - i 0.2 0.4 0.6 0.8 1.0 1.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v =5v ce collector current i (a) 0.005 c 10 1 collector-emitter voltage v (v) ce a s o collector dissipation p (w) c 0 ambient tmmperature ta ( c) 0 pc - ta 20 40 60 80 100 120 140 160 2 4 6 8 10 infinite he a t sink no heat sink 100 0.01 0.03 0.1 0.3 0.5 1 3 5 0.05 10ms 1ms 100 s dc i - v ce collector-emitter voltage v (v) 0 c 0 collector current i (a) collector current i (ma) collector emitter saturation 1 3 10 30 ce(sat) 0.01 v - i c c ce 1 2345 6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 tc=25 c 20 15 12 10 8 6 4 2 i =0ma b ce collector-base voltage v (v) output capacitance c (pf) 0.05 5 3 1 ob c - v ob cb 10 30 100 10 30 50 100 200 f=1mhz c collector current i (ma) dc current gain h 3 130 10 fe 10 h - i fe c 100 300 1k 5k 30 50 100 300 500 v =5v ce ce(sat) c voltage v (v) 100 300 1k 3k 0.03 0.05 0.1 0.3 0.5 1.0 i /i =10 c b
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